Intel and Micron sample 3-bit per cell 25nm Flash memory

Higher density and better prices on the way
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Intel and Micron have announced that the latest generation of Flash memory technology will be in production before the end of the year. 

The new 3-bit-per-cell (3bpc) NAND flash memory on 25-nanometer (nm) processos is the industry's highest capacity and smalled NAND device said Intel in a release. The new technology offers improved cost efficiencies and higher storage capacity for the competitive USB, SD (Secure Digital) flash card and consumer electronics markets.

The device is more than 20 percent smaller than the same capacity of Intel and Micron’s 25nm MLC, which Intel said was the smallest single 8GB device in production today. Small form-factor flash memory is especially important for consumer end-product flash cards given their intrinsic compact design. 

“With January’s introduction of the industry’s smallest die size at 25nm, quickly followed by the move to 3-bit-per-cell on 25nm, we continue to gain momentum and offer customers a compelling set of leadership products,” said Tom Rampone, Intel vice president of NAND Solutions. 

“Intel plans to use the design and manufacturing leadership of IMFT to deliver higher-density, cost-competitive products to our customers based on the new 8GB TLC 25nm NAND device.”

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