New technology can store up to 16 times more data than 2D products

Toshiba and SanDisk to transition to 3D NAND memory in 2016

Toshiba has announced that it will replace its Fab 2 semiconductor facility in preparation of its transition to 3D NAND memory production.

Based at Yokkaichi Operations, the company’s NAND Flash memory plant in Mie prefecture, Japan, the new fab will be jointly constructed in collaboration with SanDisk, with an estimated completion date of summer 2015.

Toshiba stated that the primary purpose of the new fab is to “secure space for converting existing Toshiba and SanDisk 2D NAND capacity to 3D NAND, beginning in 2016”.

NAND memory is the compact storage format commonly found in smartphones, tablets and other mobile devices.

The new 3D NAND format is expected to provide up to 16 times more storage capacity than existing 2D NAND products.

"Our determination to develop advanced technologies underlines our commitment to respond to continued demand of NAND flash memory,” said Yasuo Naruke, SVP of Toshiba and president and CEO of the firm’s semiconductor and storage division.

“We are confident that our joint venture with SanDisk will allow us to produce cost competitive next generation memories at Yokkaichi."

Sanjay Mehrotra, president and CEO of SanDisk, added: "We are pleased to continue our long-standing collaboration with Toshiba in this new wafer fab, which will advance our leadership in memory technology into the 3D NAND era."

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